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| JMnic Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2SB940 VCBO Collector-base voltage 2SB940A 2SB940 VCEO Collector-emitter voltage 2SB940A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ae ae Open collector Open base -180 -6 -2 -3 2 W V A A Open emitter -200 -150 V CONDITIONS VALUE -200 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB940 V(BR)CEO Collector-emitter breakdown voltage 2SB940A V(BR)CBO V(BR)EBO VCEsat VBE IEBO ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency IC=-50|I IC=-500|I A ,IE=0 A ,IC=0 IC=-5mA ,IB=0 CONDITIONS 2SB940,2SB940A SYMBOL MIN -150 TYP. MAX UNIT V -180 -200 -6 -1.0 -1.0 -50 -50 60 50 30 MHz 240 |I |I V V V V A A IC=-0.5A, IB=-50mA IC=-0.4A ; VCE=-10V VEB=-4V; IC=0 VCB=-200V; IE=0 IC=-0.15A ; VCE=-10V IC=-0.4A ; VCE=-10V IC=-0.5A; VCE=-10V,f=10MHz hFE-1 Classifications Q 60-140 P 100-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB940,2SB940A Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB940,2SB940A 4 |
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